1/8 www.dynexsemi.com mp03xxx130 series mp03xxx130 series phase control dual scr, scr/diode modules replaces january 2000 version, ds4480-4.0 ds4480-5.0 july 2002 features dual device module electrically isolated package pressure contact construction international standard footprint alumina (non-toxic) isolation medium applications motor control controlled rectifier bridges heater control ac phase control voltage ratings ordering information order as: mp03hbt130-18 or MP03HBT130-16 mp03hbp130-18 or mp03hbp130-16 mp03hbn130-18 or mp03hbn130-16 note: when ordering, please use the complete part number. key parameters v drm 1800v i tsm 4000a i t(av)(per arm) 134a v isol 3000v code circuit hbt hbp hbn fig.1 circuit diagrams fig. 2 electrical connections - (not to scale) module type code: mp03. for further information see package details. lower voltage grades available. repetitive peak voltages v drm v rrm type number 1800 1600 mp03xxx130-18 mp03xxx130-16 t vj = 125 o c i drm = i rrm = 30ma v dsm & v rsm = v drm & v rrm + 100v respectively conditions
2/8 www.dynexsemi.com mp03xxx130 series absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. test conditions half wave resistive load t case = 75?c t case = 85?c t case = 75?c 10ms half sine, t j = 125?c v r = 0 10ms half sine, t j = 125?c v r = 50% v drm commoned terminals to base plate. ac rms, 1 min, 50hz symbol i t(av) i t(rms i tsm i 2 t i tsm i 2 t v isol units a a a ka a 2 s ka a 2 s v max. 134 112 210 4.0 80 x 10 3 3.2 51.2 x 10 3 3000 parameter mean on-state current rms value surge (non-repetitive) on-current i 2 t for fusing surge (non-repetitive) on-current i 2 t for fusing isolation voltage test conditions dc half wave 3 phase mounting torque = 5nm with mounting compound reverse (blocking) - mounting - m6 electrical connections - m5 - parameter thermal resistance - junction to case (per thyristor or diode) thermal resistance - case to heatsink (per thyristor or diode) virtual junction temperature storage temperature range screw torque weight (nominal) thermal and mechanical ratings symbol r th(j-c) r th(c-hs) t vj t stg - - units ?c/kw ?c/kw ?c/kw ?c/kw ?c ?c nm (lb.ins) nm (lb.ins) g max. 0.21 0.22 0.23 0.05 125 125 5 (44) 6 (55) 950 min. - - - - - ?0 - - -
3/8 www.dynexsemi.com mp03xxx130 series units ma v/ s a/ s v m ? test conditions at v rrm /v drm , t j = 125?c to 67% v drm , t j = 125?c from 67% v drm to 400a, repetitive 50hz gate source 20v, 20 ? , t r = 0.5 s, t j = 125?c at t vj = 125?c. see note 1 at t vj = 125?c. see note 1 parameter peak reverse and off-state current linear rate of rise of off-state voltage rate of rise of on-state current threshold voltage on-state slope resistance dynamic characteristics - thyristor symbol i rrm /i drm dv/dt di/dt v t(to) r t max. 30 1000 500 1.25 1.33 min. - - - - - note 1: the data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. parameter gate trigger voltage gate trigger current gate non-trigger voltage peak forward gate voltage peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate power mean gate power test conditions v drm = 5v, t case = 25 o c v drm = 5v, t case = 25 o c v drm = 5v, t case = 25 o c anode positive with respect to cathode anode negative with respect to cathode - anode positive with respect to cathode see table fig. 5 - symbol v gt i gt v gd v fgm v fgn v rgm i fgm p gm p g(av) gate trigger characteristics and ratings max. 3.0 200 0.2 30 0.25 5 4 16 3 units v ma v v v v a w w
4/8 www.dynexsemi.com mp03xxx130 series fig. 6 transient thermal impedance - dc fig. 3 maximum (limit) on-state characteristics fig. 4 surge (non-repetitive) on-state current vs time (thyristor or diode with 50% v rrm at t case = 125?c) fig. 5 gate characteristics 0 1.0 2.0 3.0 4.0 instantaneous on-state voltage, v t - (v) 1000 800 600 400 200 0 instantaneous on-state current, i t - (a) t j = 125 ? c 1 10 1 2 3 4 5 50 0 1 5 duration 0 10 20 peak half sine wave on-state current - (ka) ms cycles at 50hz i 2 t value - (a 2 s x 10 3 ) 30 i 2 t 8 7 6 4 3 2 40 50 60 50 10 1 0.1 gate voltage, v g - (v) 0.01 0.1 1 10 gate current, i g - (a) t j = 40 ? c t j = 125 ? c t j = 25 ? c p gm = 16w 0.001 0.010 0.100 1.0 10 100 time - (s) 0 0.1 0.2 0.3 thermal impedance - ( ? c/w) r th(j-hs) r th(j-c)
5/8 www.dynexsemi.com mp03xxx130 series fig. 7 on-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60hz fig. 8 on-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60hz fig. 9 maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60hz fig. 10 maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60hz 0 25 50 75 100 125 150 mean on-state current, i t(av) - (a) 300 200 100 0 on-state power loss per arm - (w) 180 ? 120 ? 90 ? 60 ? 30 ? 0 25 50 75 100 125 150 mean on-state current, i t(av) - (a) 300 200 100 0 on-state power loss per arm - (w) 180 ? 120 ? 90 ? 60 ? 30 ? d.c. 0 25 50 75 100 125 150 mean on-state current, i t(av) - (a) 120 100 80 60 40 20 0 maximum permissible case temperature - ( ? c) 180 ? 120 ? 90 ? 60 ? 30 ? 140 0255075100125 150 mean on-state current, i t(av) - (a) maximum permissible case temperature - ( ? c) 180 ? 120 ? 90 ? 60 ? 30 ? d.c. 120 100 80 60 40 20 0 140
6/8 www.dynexsemi.com mp03xxx130 series fig. 11 50/60hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (note: r th(hs-a) values given above are true heatsink thermal resistances to ambient and already account for r th(c-hs) module contact thermal) fig. 12 50/60hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (note: r th(hs-a) values given above are true heatsink thermal resistances to ambient and already account for r th(c-hs) module contact thermal) 0 40 80 0 50 100 150 600 500 400 300 200 100 0 total power - (w) 100 60 20 maximum ambient temperature - ( ? c) d.c. output current - (a) 200 r - load l - load r th(hs-a) ? c/w 0.02 0.04 0.08 0.10 0.12 0.15 0.20 0.30 0.40 04080050100 150 600 500 400 300 200 100 0 total power - (w) 100 60 20 maximum ambient temperature - ( ? c) d.c. output current - (a) 200 r & l- load r th(hs-a) ? c/w 0.02 0.04 0.08 0.10 0.12 0.15 0.20 0.30 0.40
7/8 www.dynexsemi.com mp03xxx130 series package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. mounting recommendations adequate heatsinking is required to maintain the base temperature at 75 ? c if full rated current is to be achieved. power dissipation may be calculated by use of v t(to) and r t information in accordance with standard formulae. we can provide assistance with calculations or choice of heatsink if required. the heatsink surface must be smooth and flat; a surface finish of n6 (32 in) and a flatness within 0.05mm (0.002") are recommended. immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, scotch brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. care should be taken to ensure no foreign particles remain. an even coating of thermal compound (eg. unial) should be applied to both the heatsink and module mounting surfaces. this should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. after application of thermal compound, place the module squarely over the mounting holes, (or t slots) in the heatsink. fit and finger tighten the recommended fixing bolts at each end. using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6nm (55lbs.ins) is reached on all bolts at both ends. it is not acceptable to fully tighten one fixing bolt before starting to tighten the others. such action may damage the module. 35 5 28.5 80 115 50 52 92 3x m8 18 5.5 38 6.5 2.8x0.8 32 42.5 5 5 1 2 3 k 2 g 2 g 1 k 1 recommended fixings for mounting: m5 socket head cap screws. nominal weight: 950g auxiliary gate/cathode leads are not supplied but may be purchsed separately. module outline type code: mp03 12 3 k 2 g 2 g 1 k 1 12 3 circuit type: hbn circuit type: hbt circuit type: hbp g 1 k 1 12 3 k 2 g 2
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2002 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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